sot-323 plastic-encapsulate d iodes switching diode features z fast switching speed z for general purpose switching applications z high conductance marking: a2 maximum ratings and electrical characteristics, single diode @t a =25 parameter symbol limit unit non-repetitive peak r everse v oltage v rm 100 v peak repetitive peak r everse v oltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current i fm 300 ma average rectified output current i o 150 ma peak f orward s urge c urrent @t =1.0 s @ t =1.0s i fsm 2.0 1.0 a power dissipation p d 200 mw thermal resistance junction to ambient r ja 625 junction t emperature t j 150 storage t emperature t stg -5 5~+150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in max unit reverse breakdown voltage v (br) i r = 10a 75 v reverse voltage leakage current i r v r =75v v r =20v 1 25 a na forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 0.715 0.855 1 1.25 v diode capacitance c d v r =0, f=1mhz 2 pf reveres recovery time t rr i f =i r =10ma,i rr =0.1i r, r l =100 ? 4 n s sot-323 1 2 3 /w z z BAS16W 2012-1 willas electronic corp. preliminary
outline drawing dimensions in inches and (millimeters) sot-323 rev.d .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15) 2012-1 willas electronic corp. sot-323 plastic-encapsulate d iodes BAS16W preliminary
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